Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3).
A capillary discharge extreme ultraviolet lamp source apparatus and method for extreme ultraviolet microlithography.
The contamination barrier encloses the extreme ultraviolet radiation source.
First and second beams of extreme ultraviolet (EUV) radiation are produced.
Extreme ultraviolet radiation is generated based on high-order harmonic generation.
The invention relates to a device for generating UV radiation, in particular EUV radiation.
An EUV mask blank to be used for manufacturing the EUV mask is also provided.
The absorber includes a structure having an extreme ultra-violet radiation-transmissive beam entry area and an extreme ultra-violet radiation-transmissive beam exit area.
Thus, the radiation may be ultraviolet radiation, including near ultraviolet and far or vacuum ultraviolet radiation: visible radiation: and near infrared radiation.
Also, a partition window formed of a substance allowing the vacuum ultraviolet ray to be transmitted therethrough is provided between the vacuum ultraviolet ray source part and the radiation chamber.
The phosphor is exited with a vacuum ultraviolet ray and exhibits high brightness.
The invention relates to a method for generating EUV radiation.
The radiation source is to generate a beam (PB) of EUV radiation.
An exposure unit is used to project the first and second beams of EUV radiation onto a substrate.
In EUV lithography devices, undesired radiation fractions are suppressed by means of absorption filters.