The first being a Bipolar Junction Transistor (BJT), the second a Metal Oxide Silicon Field Effect Transistor (MOSFET), and the third consisting of three normally off JFETs connected serially.
Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor.
In a III nitride heterojunction transistor (11a), a second AlY1InY2Ga1-Y1-Y2N layer (15) forms heterojunction (21) with a first AlX1InX2Ga1-X1-X2N layer (13a).
The channel region has a doping concentration establishing a threshold voltage for the MOS transistor which is less than the threshold voltage of the parasitic bipolar junction transistor.
The techniques and circuits can be used in a wide range of applications and various transistors from metal-oxide-semiconductor to bipolar junction transistors may implement the techniques presented herein.
We describe a methods of controlling the drive to a BJT or IGBT transistor to control the saturation of said transistor to achieve fast turn-off.
n-channel junction field-effect transistor
p-channel junction field-effect transistor
The turn-off transistor functions to rapidly remove stored charge from the collector-base junction of the SR BJT (1) when appropriate.
The present invention is drawn to a silicon bipolar junction transistor having emitter line spacings on the order of approximately 0.25 microns or less.
A laser diode supply circuit comprises a laser diode (LD1) connected in series with a junction transistor (TR1).
Other types of solid state switches can be employed instead of or in addition to the bipolar junction transistor.
A process for forming a bipolar junction transistor (BJT) in a semiconductor substrate and a BJT formed according to the process.
This invention relates to a method for detecting the real cutting off signal of BJT (bipolar junction transistor) in an electronic ballast and the corresponding electronic ballast.
The technique can be used in the manufacture of a self-aligned epitaxial base BJT (bipolar junction transistor) or SiGe HBT (hetero junction bipolar transistor) .
The present invention relates to a method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT.