The method reduces the damage to the photoresist on the post-development photoresist layer during the alignment of the post-development photoresist layer.
The provided compositions include a photoresist, a photoinitiator system dispersed in the photoresist, and a polymer-tethered nanoparticle dispersed in the photoresist.
A second photoresist is formed over the first photoresist.
The photoresist unit is equipped with a wafer on which a photoresist is applied.
A photoresist film and method of using the photoresist film is described.
Provided are a photosensitive resin and a photosensitive resin composition comprising the photosensitive resin.
The photosensitive dry film has at least a photosensitive resin layer formed from the photosensitive resin composition on a support film.
The first organic photo-resist exhibits a higher selectivity against the material to be etched than the second organic photo-resist.
The first resist layer is removed from the blank and a second resist later is applied.
Also disclosed are a negative photosensitive resin laminate, and use of a negative photosensitive resin laminate.
A liquid PR material is applied over the first PR mask having the protective coating.
Also disclosed is a film for photosensitive resin spacers, which is made of the photosensitive resin composition.
A micro-lens-forming photosensitive resin composition is created from the aforementioned photosensitive resin composition.
Prior to exposure of the photosensitive resin film (21), the photosensitive resin film (21) is lined with resin film (3).
Preferably, the photosensitive resin composition additionally comprises a carboxyl-group-containing photosensitive resin (C) that is different from the resin (A).