The metal mask is formed through wet etching, with a wet etch stop film preventing the existing layer from being attacked by the wet etchant.
The etching step is performed by wet etching in which an etching solution is used.
Disclosed is a jig for wet etching (1), which holds a board-like subject to be processed at the time of wet etching the subject.
The tilted side surfaces (7a) are formed by wet etching.
The resist film is removed after the wet etching.
Reservoirs are etched into the substrate using either chemical (wet) etching or ion beam (dry) etching techniques well-known in the field of microfabrication.
The etch of the P channel (38) gate stack is completed with a wet etch.
A wet or dry (such as RIE) etch may be employed.
The metal oxide hardmasks can be etched with wet or dry etching.
Also provided is a method for producing said light-emitting diode.
Additional texture steps comprising wet etch or RIE etching may be optionally applied.
The wet etch completes the formation of the ridge and stops at the wet etch stop layer.
The method of texturing the solar includes texturing a surface of a substrate of the solar cell using a wet etchant, and the wet etchant includes a surfactant.
The portion exposed by dry-etching of the transparent conductive film is wet-etched to remove the remaining photoresist, using the remaining photoresist as a mask.
In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non¬ volatile copper at substrate bevel edge in a wet etch processing chamber.
The device includes an overhang area that is formed by a wet process etch.
Wet etch rate is an indication of film density.
The conformal layer is then removed using a wet etchant.
In order to tailor the shape of the texturing, different wet etch chemistries may be utilized.
The transparent conductive film of the present invention is formed simply by a sputtering process without a wet-etching process.