Disclosed is a silicon etching method for etching a silicon substrate to provide silicon trenches of different width dimensions.
Methods can include dielectric stack etching that uses a mask trimming step as part of a silicon etching process.
In an alternate embodiment, the hydrogen fluoride is recovered from the reaction process and reintroduced into the porous silicon etching process.
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein.
Disclosed is a silicon etching liquid characterized by anisotropically dissolving a single crystal silicon by using an aqueous solution containing quaternary ammonium hydroxide and an aminoguanidine salt.
A method for etching silicon by using the etchant is also disclosed.
The invention also relates to the use of said etching solution for etching silicon and to etching methods for silicon wafers.
A silicon germanium etch is provided.
A method and system for deep trench silicon etch is presented.
Therein, for instance a deep silicon etch is required and further high aspect structures are designed.
A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.
Also disclosed is a method for producing a transistor by using the silicon etchant.
Methods of silicon etch for trench sidewall smoothing are described.
The geometric design of the measuring cell (1) and the plates (2, 3) is defined by a multistage process of selective or anisotropic pattern deposition and etching of single crystalline silicon or other semiconductor material.
A method of etching silicon for backside thinning, formation of vias and wafer dicing that comprises the use of fluorine-containing gas, heated by a laser.