The seed crystal may be a non-polar seed crystal.
The seed shaft has a bottom end surface (28S) to which a seed crystal (32) is attached.
The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.
Openings are formed in the guide members (8) at positions corresponding to the seed crystal (7), and are provided at intervals from each other between the silicon carbide starting material (5) and the seed crystal (7).
The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible.
The seed-crystal shaft for single-crystal growth by the solution method is a seed-crystal shaft for use in an apparatus for producing a single crystal by the solution method.
Finally the resist and seed layer are removed.
First, a thin patterned dielectric mask is applied to the seed layer.
The hydrogen layer is grown on a seed layer.
The first seed layer contains an Fe oxide.
The jig (41) is provided with a seed shaft (411) and a cover member (412).
The cover member (412) is arranged at the bottom end of the seed shaft (411).
A group 13 element nitride is provided on the seed crystal substrate.