Junction diode assembly formed In enclosed trenches occupies less chip area compared with junction-isolation diode assembly In the known art.
A pn junction diode (250) having its metallurgical junction of the oppositely-doped regions (254, 256) coincident with the surface WS of an electrically-doped wafer W and a method of forming such a diode.
An electronic device (10) can include a gated diode, wherein the gated diode includes a junction diode structure including a junction.
The semiconductor junction diode (30) comprises silicon, the silicon crystallized in contact with a suicide.
The switching means (10) of one or more stages (11) comprises a lateral PIN junction diode.
The first conductive type substrate comprises P-N junction first to fourth diodes.
The first metal electrode is connected to the first diode and the fourth diode.
Writing of data into the floating gate electrode of the MOS device is achieved by causing a voltage breakdown across the diode p-n junction (54) and the flow of high energy electrons across the junction.