During diffusion, this halo limits lateral diffusion of the source/drain dopants.
During drive-in, the closely-spaced trench isolation structures (230) significantly limit the lateral diffusion.
Also provided is a diffusion method comprising the steps of measuring the lateral diffusion of the one or more components from the component flow into the blank fluid flow at a plurality of diffusion times.
The lateral diffusion of charged and/or polar components of the resist system can thus be reduced or prevented.
The first half membrane spanning monomers are capable of lateral diffusion within the upper layer while the second half membrane-spanning monomers are prevented from lateral diffusion within the bottom layer.
The invention relates to side-scattering light guides that generally comprise a core of transparent optically homogenous material seeded with diffuser particles.
A novel Laterally Diffused NMOS device is described.
In another aspect, the invention provides an HSV vector, which exhibits lateral spread in cells typically resistant to HSV lateral spread, such as cells lacking gD receptors.
Further provided is a laterally diffused metal oxide semiconductor device.
Reaction to fire tests — Spread of flame Part 2 Lateral spread on building products in vertical configuration
The invention relates to a lateral DMOST with a drain extension (8).
A lateral diffused MOS transistor formed in an epitaxial layer includes a trench source contact (30).
A laterally diffused metal oxide semiconductor (LDMOS) device with a multi-layer super-junction structure is provided.
A lateral double diffused metal oxide semiconductor field effect transistor (LDMOS) (20) is provided.
This leads to regulation of the water budget and/or to compensation for the gas distribution of the reaction gases.
The directed light of the light source provides adequate lighting for use of the invention in unlit or dimly lit settings with minimum lateral scattering.
Dopant introduced into the mesa between the trenches is limited from diffusing laterally when the substrate is subjected to thermal processing.
The isolated high-voltage LDMOS transistor according to the present invention includes a split N-well and P-well in the extended drain region.
A light guide (1) formed from an unclad flexible polyurethane fibre produces significant side scattering (2) over distances of up to several metres.