In one aspect, the protective media includes a porous dielectric carrier, an active agent incorporated in the porous dielectric carrier, and an electrostatic charge across at least a portion of the porous dielectric carrier.
The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material.
The porous dielectric material is between the electrodes.
Rapid Anneal Processing (RAP) of the UV cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus as compared to the UV cured porous dielectric material.
UV curing of the porous dielectric material yields a material with improved modulus and comparable dielectric constant.
After the conductive elements are formed, remaining porogen is decomposed to leave a porous low-k dielectric layer (58, 60).
The silylation agent reacts with Si-OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.
A method for improving the adhesion of an impermeable film on a device such as porous low-k dielectric film in an interconnect structure is disclosed.
The method further provides in-situ deposition of the impermeable film following the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules
The method also provides in-situ deposition of the impermeable film following the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules.
Silica sealed the surface pores of a porous dielectric by the reaction of an aluminum-containing compound with an alkoxysilanol.
Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film.
A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens.